TP2104K1-G 数据手册
其他文档
TP2104 14 pages
技术规格
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Microchip Tech TP2104K1-G
- Operating Temperature: -55°C~+150°C
- Power Dissipation (Pd): 360mW
- Drain Source Voltage (Vdss): 40V
- Input Capacitance (Ciss@Vds): 60pF@25V
- Continuous Drain Current (Id): 160mA
- Gate Threshold Voltage (Vgs(th)@Id): 2V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 6Ω@10V,500mA
- Package: SOT-23(TO-236)
- Manufacturer: Microchip Tech
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB (SOT23)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- detail: P-Channel 40V 160mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23)